LEDIA17

Paper Award

A few papers will be selected for the “Paper Award” for young researcher. Around 10 papers will be nominated for the award based on the program committee’s ratings of the abstracts. The paper award will be judged from their presentations and announced at the closing to be held on the last day. (April 21, Friday).

Paper Award of LEDIA’17

Young Researcher’s Paper Award

Fabrication of idiosyncratic GaN structures by ICP-RIE with enhanced chemical etching conditions and its applications

N. Okada
Yamaguchi University (Japan)

Student’s Paper Award, “Yamaguchi Masahito Award”

Yamaguchi Masahito, Ph. D, Associate Professor, Nagoya University, Steering Committee Member of LEDIA’13. He passed away in July, 2013, at the age of 45. We inherited his will to educate students and established Student’s Paper Award with the financial aid of MUTSUMI CORPORATION.

Nano-scale correlation of the optical, structural, and compositional properties of InGaN/GaN core-shell nanorod LEDs

M. Müller
Otto-von-Guericke-University Magdeburg (Germany)

Effect of gaseous carbon addition in GaN crystal growth by Na-flux method

N. Takeda
Osaka University (Japan)

Paper Award of LEDIA ’16

Young Researcher’s Paper Award

Controlled Growth of Highly Elongated GaN Nanorod Arrays on AlN/Si Templates by Pulsed-Mode Metalorganic Vapor Deposition

S.-Y. Bae
Nagoya University (Japan)

Strongly TE-Polarized Emission from Deep UV AlGaN Quantum Well LEDs

C. Reich
Technical University Berlin (Germany)

Student’s Paper Award, “Yamaguchi Masahito Award”

Yamaguchi Masahito, Ph. D, Associate Professor, Nagoya University, Steering Committee Member of LEDIA ’13. He passed away in July, 2013, at the age of 45. We inherited his will to educate students and established Student’s Paper Award with the financial aid of MUTSUMI CORPORATION.

GaN-based VCSELs using Periodic Gain Structures

K. Matsui
Meijo University (Japan)

Opto-electrical Properties of Tapered (Al,In)GaN Laser Diodes

S. Stanczyk
Institute of High Pressure Physics (Poland)

Paper Award of LEDIA ’15

Young Researcher’s Paper Award

Opto-electrical Properties of Tapered (Al,In)GaN Laser Diodes

T. Sochacki
Institute of High Pressure Physics (Poland), TopGaN (Poland)

Student’s Paper Award, “Yamaguchi Masahito Award”

Yamaguchi Masahito, Ph. D, Associate Professor, Nagoya University, Steering Committee Member of LEDIA ’13. He passed away in July, 2013, at the age of 45. We inherited his will to educate students and established Student’s Paper Award with the financial aid of MUTSUMI CORPORATION.

HVPE-GaN Growth on GaN-Based Advanced Substrate by Smart CutTM

M. Iwinska
Institute of High Pressure Physics (Poland)

Influence of V/III Ratio and Layer Thicknesses on MOVPE-Grown N-Polar (000-1) InGaN Multiple Quantum Wells

K. Shojiki
Tohoku University (Japan)

Paper Award of LEDIA ’14

Young Researcher’s Paper Award

Nonpolar M-Plane AlGaN Deep-UV LEDs

Ryan G. Banal
NTT Corporation (Japan)

Realization of p-Type Conduction in Mg-Doped N-Polar (000-1) GaN Grown by Metalorganic Vapor Phase Epitaxy

Tomoyuki Tanikawa
Tohoku University (Japan)

Student’s Paper Award, “Yamaguchi Masahito Award

Yamaguchi Masahito, Ph. D, Associate Professor, Nagoya University, Steering Committee Member of LEDIA ’13. He passed away in July, 2013, at the age of 45. We inherited his will to educate students and established Student’s Paper Award with the financial aid of MUTSUMI CORPORATION.

Optimization of InGaN Superluminescent Diodes: State of the Art Devices and an Analysis of Their Limiting Factors

Anna Kafar
Institute of High Pressure Physics (Poland)

Growth Optimization of Green InGaN Multi-Quantum Well on Bulk GaN Substrate by In Situ Monitoring System

Tadashi Mitsunari
Nagoya University (Japan)

PAGETOP