LEDIA17

Invited Speakers

Z. Sitar, North Carolina State Univ. (USA)
“Advances in AlGaN-Based Laser Diodes”

Y.G. Park, Seoul National Univ. (Korea)
“Growth and Optical Characteristics of GaN-based LED
on Cavity-Engineered Sapphire Substrate”

C. Durand, CNRS (France)
“Multi-Color Flexible LED Based on Nitride Nanowires”

Daehong Min, Donghwy Park, Kyuseung Lee, Okhyun Nam, Korea Polytechnic University (Korea)
“Colour-crafted phosphor-free white light emitters via in-situ nanostructure engineering”

Y.H. Cho, KAIST (Korea)
“Classical and Quantum Light Generation Using Nano-
and Micro-Structured Nitride Semiconductors”

K. Kojima & S.F. Chichibu, Tohoku Univ. (Japan)
To be announced.

S. Usami, Y. Honda & H. Amano, Nagoya Univ. (Japan)
“IQE Quantification of Nitride Semiconductors
-­Photocurrent and Photoluminescence Measurements for InGaN Based LED-­”

A.A. Yamaguchi1, T. Nakano1, S. Sakai1, H. Fukada1, Y. Kanitani2 & S. Tomiya2,
1Kanazawa Inst. of Tech., 2Sony Corp. (Japan)
“IQE Quantification of Nitride Semiconductors
-­Simultaneous Photo-acoustic and Photoluminescence Measurements
for InGaN Quantum Wells-­”

T. Araki, Ritsumeikan Univ. (Japan)
“Evaluation of Nitrides Semiconductors Using Terahertz
Time-Domain Spectroscopic Ellipsometry”

T. Kageyama1, M. Sugawara3 & Y. Arakawa1,2,
1NanoQuine, The Univ. of Tokyo, 2IIS, The Univ. of Tokyo, 3QD laser (Japan)
“Recent Progress in Quantum Dot Lasers”

M. Krames, ARKESSO, LLC (USA)
“Status and Prospects for Wide Bandgap LEDs / Lasers and Their Applications”

T. Oshima, Saga Univ. (Japan)
“Growth and Characterization of (Al,Ga)2O3-Based Alloy and Heterostructures”

M. Iwinska & M. Bockowski, UNIPRESS (Poland)
“HVPE as a method for crystallizing GaN with low background impurity concentration with controllable doping – highly conductive n-type and semi-insulating material.”

H. Hardtdegen & M. Mikulics, PGI, Forschungszentrum Jülich, JARA (Germany)
“Emerging technologies based on III-nitride nano-LEDs”

Tutorial Lecture

A. Uedono, Univ. of Tsukuba (Japan)
“Study of Point Defects in Nitrides and Oxides by Means of Positron Annihilation”

PAGETOP